maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 180 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 6.0 v collector current i c 1.0 a power dissipation p d 2.0 w operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 62.5 c/w electrical characteristics per transistor: (t a =25c unless otherwise noted) symbol test conditions min typ max units i cbo v cb =120v 50 na i cbo v cb =120v, t a =100oc 50 a i ebo v be =4.0v 50 na bv cbo i c =100a 180 v bv ceo i c =1.0ma 160 v bv ebo i e =10a 6.0 v v ce(sat) i c =10ma, i b =1.0ma 0.15 v v ce(sat) i c =50ma, i b =5.0ma 0.20 v v be(sat) i c =10ma, i b =1.0ma 1.00 v v be(sat) i c =50ma, i b =5.0ma 1.00 v h fe v ce =5.0v, i c =1.0ma 80 h fe v ce =5.0v, i c =10ma 80 250 h fe v ce =5.0v, i c =50ma 30 h fe v ce =10v, i c =1.0a 10 f t v ce =10v, i c =10ma, f=100mhz 100 mhz c ob v cb =10v, i e =0, f=1.0mhz 15 pf CYT5551HCD surface mount dual, isolated npn high current silicon transistors sot-228 case central semiconductor corp. tm r1 (11-august 2005) description: the central semiconductor CYT5551HCD type consists of two (2) isolated npn high current silicon transistors packaged in an epoxy molded sot-228 surface mount case. manufactured by the epitaxial planar process, this supermini? device is ideal for high current applications. marking code: full part number
central semiconductor corp. tm sot-228 case - mechanical outline CYT5551HCD surface mount dual, isolated npn high current silicon transistors r1 (11-august 2005) lead code: 1) collector q1 2) collector q1 3) collector q2 4) collector q2 5) emitter q2 6) base q2 7) emitter q1 8) base q1 marking code: full part number
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